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| DISCRETE SEMICONDUCTORS DATA SHEET PN4416; PN4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel field-effect transistor FEATURES * Low noise * Interchangeability of drain and source connections * High gain. DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT54 (TO-92). PIN 1 2 3 gate source drain DESCRIPTION IDSS Ptot VGS(off) QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source voltage PN4416 PN4416A drain current total power dissipation gate-source cut-off voltage PN4416 PN4416A Yfs common-source transfer admittance PN4416; PN4416A CONDITIONS MIN. MAX. UNIT - - 30 35 15 400 V V mA mW VDS = 15 V; VGS = 0 5 up to Tamb = 25 C VDS = 15 V; ID = 1 nA - -2.5 VDS = 15 V; VGS = 0; f = 1 kHz 4.5 - -6 -6 7.5 V V mS 1 handbook, halfpage 2 3 g MAM042 d s Fig.1 Simplified outline and symbol. December 1997 2 Philips Semiconductors Product specification N-channel field-effect transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS PARAMETER drain-source voltage PN4416 PN4416A VGSO gate-source voltage PN4416 PN4416A VGDO gate-drain voltage PN4416 PN4416A IG Ptot Tstg Tj DC forward gate current total power dissipation storage temperature junction temperature up to Tamb = 25 C (note 1) - - - - - - - - CONDITIONS PN4416; PN4416A MIN. MAX. 30 35 -30 -35 -30 -35 10 400 +150 150 V V V V V V UNIT mA mW C C -65 - THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for drain leads 10 mm2. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)GSS PN4416 PN4416A IGSS IDSS VGSS VGS(off) reverse gate leakage current drain current gate-source forward voltage gate-source cut-off voltage PN4416 PN4416A Yfs Yos common source transfer admittance common source output admittance PN4416 PN4416A VDS = 15 V; VGS = 0 VDS = 15 V; VGS = 0 - - 50 50 S S VDS = 0; VGS = -15 V VDS = 15 V; VGS = 0 VDS = 0; IG = 1 mA VDS = 15 V; ID = 1 nA - -2.5 4.5 -6 -6 7.5 V V mS PARAMETER gate-source breakdown voltage CONDITIONS VDS = 0; IG = -1 A -30 -35 - 5 - - - -1 15 1 V V nA mA V MIN. MAX. UNIT PARAMETER from junction to ambient (note 1) THERMAL RESISTANCE 350 K/W December 1997 3 Philips Semiconductors Product specification N-channel field-effect transistor DYNAMIC CHARACTERISTICS Tj = 25 C; VDS = 15 V; VGS = 0. SYMBOL Cis Cos Crs gis gfs grs gos Vn PARAMETER input capacitance output capacitance feedback capacitance common source input conductance common source transfer conductance common source feedback conductance common source output conductance equivalent input noise voltage CONDITIONS f = 1 MHz f = 1 MHz f = 1 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 Hz - - - - - - 4 - - - - - MIN. PN4416; PN4416A TYP. - - - - - 5.2 5 -8 -100 - - 5 4 2 MAX. UNIT pF pF pF S mS mS mS S S S S nV/Hz 0.8 100 1 - - - - 75 100 - handbook,25 halfpage MRC168 MRC169 I DSS (mA) handbook, 10 halfpage Y fs (mS) 8 20 15 6 10 4 5 2 0 0 2 4 6 -VGS(off) (V) 0 0 2 4 6 -VGS(off) (V) VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.2 Drain current as a function of gate-source cut-off voltage; typical values. Fig.3 Common source transfer admittance as a function of gate-source cut-off voltage; typical values. December 1997 4 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A handbook, halfpage 80 MRC167 handbook, halfpage 12 MRC163 Gos ( S) 60 ID (mA) 8 VGS = 0 V 40 -0.5 V 4 20 -1V 0 0 1 2 3 4 5 -VGS(off) (V) VDS = 15 V; Tj = 25 C. Tj = 25 C. 6 0 0 4 8 12 VDS (V) 16 Fig.4 Common source output conductance as a function of gate-source cut-off voltage; typical values. Fig.5 Typical output characteristics. handbook, 12 halfpage MRC164 1 handbook, halfpage C rs (pF) MRC158 ID (mA) 8 0.8 0.6 0.4 4 0.2 0 -5 -4 -3 -2 -1 0 V (V) GS 0 -10 -8 -6 -4 -2 0 V (V) GS VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.6 Typical input characteristics. Fig.7 Typical feedback capacitance. December 1997 5 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A MRC157 3.5 handbook, halfpage Cis (pF) 3 2.5 4 handbook,10 halfpage MRC165 -I G (pA) 10 3 2 I D = 1 mA 10 2 10 1.5 1 0.5 0 -10 10 1 0.1 mA I GSS -1 -8 -6 -4 -2 0 VGS (V) 10 -2 0 4 8 12 16 20 VDG (V) VDS = 15 V; Tj = 25 C. Fig.8 Typical input capacitance. Fig.9 Gate current as a function of drain-gate voltage, typical values. 500 handbook, halfpage P tot (mW) 400 MRC139 100 handbook, halfpage gis , b is (mS) 10 b is MRC160 300 1 200 g is 100 0.1 0 0 50 100 Tamb ( C) o 150 0.01 10 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.10 Power derating curve. Fig.11 Common source input conductance; typical values. December 1997 6 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A handbook, halfpage 100 MRC159 100 handbook, halfpage -g rs , -brs (mS) 10 MRC162 g fs , -bfs (mS) 10 -brs g fs 1 1 -b fs 0.1 -g rs 0.01 0.1 10 100 f (MHz) 1000 0.001 10 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.12 Common source transfer conductance; typical values. Fig.13 Common source feedback conductance; typical values. SPICE parameters for PN4416 September 1992; version 1.0. 100 MRC161 1 2 3 4 5 6 7 8 9 VTO = -3.553 BETA = 792.6 LAMBDA = 18.46 RD = 7.671 RS = 7.671 IS = 333.4 CGSO = 2.920 CGDO = 2.261 PB = 1.090 FC = 500.0 V A/V2 m/V aA pF pF V m handbook, halfpage gos , bos (mS) 10 b os 1 0.1 g os 0.01 10 10 (note 1) Note 1. Parameter not extracted; default value. 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.14 Common source output conductance; typical values. December 1997 7 Philips Semiconductors Product specification N-channel field-effect transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads PN4416; PN4416A SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 December 1997 8 Philips Semiconductors Product specification N-channel field-effect transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values PN4416; PN4416A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 9 |
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